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UDT1605 - 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR

General Description

The UT C UDT1605 is a n NPN Dar lington transistor.

Key Features

  • High breakdown voltage.
  • Low saturation voltage.
  • Ultra-high DC current gain.
  • SYMBOL.

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Full PDF Text Transcription for UDT1605 (Reference)

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UNISONIC TECHNOLOGIES CO., LTD UDT1605 Preliminary NPN EPITAXIAL SILICON TRANSISTOR 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR „ DESCRIPTION The UT C UDT1605 is ...

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HIGH VOLTAGE DARLINGTON TRANSISTOR „ DESCRIPTION The UT C UDT1605 is a n NPN Dar lington transistor. Utilizing UTC’s advanced techon ology, UDT1605 features ultra- high D C current gai n and lo w c ollector-emitter saturation volta ge, making it suitable for efficient driving functions. The U TC UDT1605 is suita ble for a vari ety of efficient drivin g functions, etc.