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EDC910D-1100-S5 - 910nm High Power TOP LED

Features

  • Chip Material : AlGaAs.
  • Chip Dimension : 1000um.
  • 1000um.
  • Number of Chips : 1pce.
  • Peak Wavelength : 910nm typ.
  • Lead Frame Die : Ceramics.
  • Lens : Silicone Resin.

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Datasheet Details

Part number EDC910D-1100-S5
Manufacturer USHIO
File Size 179.15 KB
Description 910nm High Power TOP LED
Datasheet download datasheet EDC910D-1100-S5 Datasheet

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Data Sheet EDC910D-1100-S5 rev. B 910nm High Power TOP LED Outline and Internal Circuit (Unit : mm) Features • Chip Material : AlGaAs • Chip Dimension : 1000um * 1000um • Number of Chips : 1pce • Peak Wavelength : 910nm typ. • Lead Frame Die : Ceramics • Lens : Silicone Resin Application Absolute Maximum Ratings (Tc=25°C) Item Symbol Ratings Power Dissipation PD 2500 Forward Current IF 1000 Pulse Forward Current IFP 3000 Reverse Voltage VR 5 Thermal Resistance Rthja 10 Junction Temperature Tj 120 Operating Temperature Topr -40 ~ +100 Storage Temperature Tstg -40 ~ +100 Soldering Temperature TSOL 250 ‡Pulse Forward Current condition : Duty 1% and Pulse Width=10us. ‡Soldering condition : Soldering condition must be completed with 5 seconds at 250°C.
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