Unisonic Technologies 02N35Z
02N35Z is a silicon N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge.| Part No. | 02N35Z |
|---|---|
| Datasheet | 02N35Z Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 7.5Ω @ VGS=10V, ID=0.1A RDS(ON) ≤ 8.0Ω @ VGS=4.5V, ID=0.1A * High switching speed * Low input capacitance● SYMBOL 3. Drain 3 2 1 SOT-23 (EIAJ SC-59) 1. Gate 2. Source
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 02N35ZL-AE3-R 02N35ZG-AE3-R SOT-23 Note: Pin Assignment: G: Gate S: Source D: Drain Pin Assignment 1 2 3 G S D 02N35ZG-AE3-R (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AE3: SOT-23 Packing Tape Reel (3)Green Package (3) G: Halogen Free and Lead Free, L: Lead Free
● MARKING 02NZ Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-564.A 02N35Z Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 350 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous ID Pulsed (Note 2) IDM 0.2 A 0.4 A Power Dissipation PD 0.3 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
