Unisonic Technologies 05N65-TA
05N65-TA is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 05N65-TA |
|---|---|
| Datasheet | 05N65-TA Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) <15Ω @ VGS = 10V, ID = 0.25A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package - 05N65G-AA3-R SOT-223 05N65L-T92-B 05N65G-T92-B TO-92 05N65L-T92-K 05N65G-T92-K TO-92 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS Packing Tape Reel Tape Box Bulk
● MARKING SOT-223 Copyright © 2017 Unisonic Technologies Co., Ltd TO-92 1 of 6 QW-R205-359.a 05N65-TA Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 650 ±30 V V Drain Current Continuous Pulsed (Note 2) ID IDM 0.5 A 2.0 A Avalanche Current (Note 3) Avalanche Energy Single Pulsed (Note 3) IAR EAS 0.78 A 45.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation SOT-223 TO-92 PD 6.0 W 1.4 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
