Unisonic Technologies 05NL70
05NL70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.| Part No. | 05NL70 |
|---|---|
| Datasheet | 05NL70 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 8.5 Ω @ VGS=10V, ID=0.25A * Fast switching * 100% avalanche tested * Improved dv/dt capability● SYMBOL 2.Drain 1 TO-252 1.Gate 3.Source
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 05NL70L-TN3-R 05NL70G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 1 2 3 G D S Packing Tape Reel 05NL70G-TN3-R (1)Packing Type (2)Package Type (3)Green Package (1) R: Tape Reel (2) TN3: TO-252 (3) G: Halogen Free and Lead Free, L: Lead Free
● MARKING Lot Code UTC 0 5 NL70 1 L: Lead Free G: Halogen Free Date Code Copyright © 2020 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-709.a 05NL70 Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID 0.5 A Pulsed IDM 1 A Avalanche Energy Single Pulsed (Note 3) EAS 1 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4 V/ns Power Dissipation PD 38 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1.
