Datasheet4U Logo Datasheet4U.com

05NM60 - N-CHANNEL MOSFET

General Description

The UTC 05NM60 is an Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(on) ≤ 8.8 Ω @ VGS=10V, ID=0.25A.
  • High breakdown voltage SOT-89 SOT-223 3 12 1 SOT-23 (EIAJ SC-59) TO-92.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
05N03L IPB05N03L Infineon Technologies
05N03LAG IPU05N03LAG Infineon Technologies
05N03LS5 MOSFET Infineon
05N06 N-Channel Enhancement Mode Power MOSFET GOFORD
05NH45 Super Fast Recovery Rectifiers Toshiba

Other Datasheets by Unisonic Technologies

Part Number Description
05N30 300V N-CHANNEL POWER MOSFET
05N45 N-CHANNEL POWER MOSFET
05N60-CB N-CHANNEL POWER MOSFET
05N65-TA N-CHANNEL MOSFET
05NL70 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 05NM60 Preliminary Power MOSFET 0.5A, 600V N-CHANNEL SUPER-JUNCTION MOSFET 1 1  DESCRIPTION The UTC 05NM60 is an Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(on) ≤ 8.8 Ω @ VGS=10V, ID=0.