Unisonic Technologies 05NM60
05NM60 is an Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 05NM60 |
|---|---|
| Datasheet | 05NM60 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(on) ≤ 8.8 Ω @ VGS=10V, ID=0.25A * High breakdown voltage SOT-89 SOT-223 3 12 1 SOT-23 (EIAJ SC-59) TO-92● ORDERING INFORMATION Order Number Lead Free Halogen Free 05NM60L-AA3-R 05NM60G-AA3-R 05NM60L-AB3-R 05NM60G-AB3-R 05NM60L-AE3-R 05NM60G-AE3-R 05NM60L-T92-B 05NM60G-T92-B 05NM60L-T92-K 05NM60G-T92-K Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 SOT-89 SOT-23 TO-92 TO-92 Pin Assignment 1 2 3 G D S G D S G S D G D S G D S Packing Tape Reel Tape Reel Tape Reel Tape Box Bulk
● MARKING SOT-223 SOT-23 SOT-89 TO-92 Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-222.b 05NM60 Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 600 V VGSS ±30 V Drain Current Continuous ID Pulsed (Note 2) IDM 0.5 2.0 A A SOT-223 3.5 W Power Dissipation SOT-89 SOT-23 PD 1.8 W 1.4 W TO-92 2.8 W Junction Temperature Storage Temperature Range TJ +150 °C TSTG -55 ~ +150 °C Notes: 1.
