Datasheet4U Logo Datasheet4U.com

100N02 - N-CHANNEL MOSFET

General Description

The UTC 100N02 is an N-channel Power Trench MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed.

The UTC 100N02 is generally applied in synchronous Rectification or DC to DC convertor.

Key Features

  • RDS(ON) ≤ 7.5mΩ @ VGS=4.5V, ID=55A RDS(ON) ≤ 17mΩ @ VGS=3.5V, ID=30A.
  • Low Gate Charge (Typical 46nC).
  • High Switching Speed.
  • High Power and Current Handling Capability 1 TO-251 1 TO-252.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
100N03 N-CHANNEL MOSFET KIA
100N03 MOSFET GFD
100N03L N-Channel MOSFET STMicroelectronics
100N055 Power MOSFET IXYS Corporation
100N06L N-Channel MOSFET VBsemi

Other Datasheets by Unisonic Technologies

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 100N02 100A, 15V N-CHANNEL POWER TRENCH MOSFET Power MOSFET  DESCRIPTION The UTC 100N02 is an N-channel Power Trench MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. The UTC 100N02 is generally applied in synchronous Rectification or DC to DC convertor.  FEATURES * RDS(ON) ≤ 7.5mΩ @ VGS=4.5V, ID=55A RDS(ON) ≤ 17mΩ @ VGS=3.