Unisonic Technologies 10N100-FL
10N100-FL is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.| Part No. | 10N100-FL |
|---|---|
| Datasheet | 10N100-FL Download |
| Manufacturer |  Unisonic Technologies |
| Description | 1000V N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 1.9 Ω @ VGS=10V, ID=5.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N100L-TF1-T 10N100G-TF1-T 10N100L-TF2-T 10N100G-TF2-T 10N100L-TF3-T 10N100G-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-220F Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube
● MARKING Copyright © 2020 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-764.A 10N100-FL Power MOSFET
●
ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 1000 V VGSS ±30 V Continuous Drain Current Pulsed Drain Current (Note 2) ID 10 A IDM 20 A Avalanche Energy Single Pulsed (Note 3) EAS 158 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 1.84 V/ns Power Dissipation Junction Temperature PD 37 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
