Unisonic Technologies 10N60-HC
10N60-HC is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 10N60-HC |
|---|---|
| Datasheet | 10N60-HC Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 0.7 Ω @ VGS =10V, ID = 5.0A * Fast switching * Improved dv/dt capability● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen-Free 10N60L-TF3-T 10N60G-TF3-T 10N60L-TF3T-T 10N60G-TF3T-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F TO-220F3 Pin Assignment 123 GDS GDS Packing Tube Tube
● MARKING Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-482.A 10N60-HC Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous Pulsed (Note 2) ID IDM 10 20 A A Avalanche Energy Single Pulsed (Note 3) EAS 210 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.5 V/ns Power Dissipation PD 32 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
