Unisonic Technologies 10N60K-MTQ
10N60K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.| Part No. | 10N60K-MTQ |
|---|---|
| Datasheet | 10N60K-MTQ Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 1.0 Ω @ VGS = 10 V, ID = 5.0 A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 10N60KL-TF3-T 10N60KG-TF3-T TO-220F 10N60KL-TF1-T 10N60KG-TF1-T TO-220F1 10N60KL-TF2-T 10N60KG-TF2-T TO-220F2 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12 3 GD S GD S GD S Packing Tube Tube Tube
● MARKING Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-329.B 10N60K-MTQ Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage Continuous Drain Current VGSS ID ±30 10 V A Pulsed Drain Current (Note 2) Avalanche Current (Note 2) IDM 40 A IAR 8.0 A Avalanche Energy Single Pulsed (Note 3) EAS 365 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 ns TO-220 156 W Power Dissipation TO-220F1 PD 50 W TO-220F2 52 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
