Unisonic Technologies 10N65-C
10N65-C is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 10N65-C |
|---|---|
| Datasheet | 10N65-C Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 0.86Ω@VGS =10V * Fast switching * 100% avalanche tested * Improved dv/dt capability● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 10N65L-TF3-T 10N65G-TF3-T TO-220F Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS Packing Tube
● MARKING INFORMATION PACKAGE TO-220 Copyright © 2014 Unisonic Technologies Co., Ltd MARKING 1 of 7 QW-R502-A79.a 10N65-C Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ± 30 V Avalanche Current (Note 2) Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) IAR ID IDM EAS EAR dv/dt 10 A 10 A 38 A 156 mJ 15.6 mJ 4.5 V/ns Power Dissipation Junction Temperature PD 156 W TJ +150 °C Operating Temperature Storage Temperature TOPR TSTG -55 ~ +150 -55 ~ +150 °C °C Notes: 1.
