Unisonic Technologies 10N65Z-Q
10N65Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 10N65Z-Q |
|---|---|
| Datasheet | 10N65Z-Q Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) =0.95Ω@ VGS=10V, ID=4.75A * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N65ZL-TF1-T 10N65ZG-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 Pin Assignment 123 GDS Packing Tube Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-980. A 10N65Z-Q Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ± 20 V Avalanche Current (Note 2) Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) IAR ID IDM EAS EAR dv/dt 10 A 10 A 38 A 250 mJ 15.6 mJ 4.5 V/ns Power Dissipation Junction Temperature PD 50 W TJ +150 °C Operating Temperature Storage Temperature TOPR TSTG -55 ~ +150 -55 ~ +150 °C °C Notes: 1.
