Unisonic Technologies 10N70-MH
10N70-MH is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.| Part No. | 10N70-MH |
|---|---|
| Datasheet | 10N70-MH Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 1.35 Ω @ VGS=10V, ID=5.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N70L-TF1-T 10N70G-TF1-T 10N70L-TF2-T 10N70G-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube
● MARKING Copyright © 2020 Unisonic Technologies Co., Ltd 1 of 5 QW-R205-787.a 10N70-MH Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 700 V VGSS ±30 V Continuous Drain Current Pulsed Drain Current (Note 2) ID 10 A IDM 20 A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 218 mJ 2.9 V/ns Power Dissipation Junction Temperature PD 35 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
