10N70-MH
Description
The UTC 10N70-MH is a high voltage power MOSFET bines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.
Key Features
- * RDS(ON) ≤ 1.35 Ω @ VGS=10V, ID=5.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
- SYMBOL Power MOSFET
