Unisonic Technologies 10N70-ML
10N70-ML is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.| Part No. | 10N70-ML |
|---|---|
| Datasheet | 10N70-ML Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 1.4 @ VGS=10V, ID=5.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N70L-TF1-T 10N70G-TF1-T 10N70L-TF2-T 10N70G-TF2-T 10N70L-TND-R 10N70G-TND-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-252D Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-715.B 10N70-ML
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 9 QW-R205-715.B 10N70-ML Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 2) Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) VDSS VGSS ID IDM EAS dv/dt 700 V ±30 V 10 A 20 A 163 mJ 2.8 V/ns Power Dissipation TO-220F1/TO-220F2 TO-252D PD 35 W 60 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
