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10N70 Datasheet PDF

Unisonic Technologies 10N70

10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
Part No. 10N70
Datasheet 10N70 Download
Manufacturer
Unisonic Technologies
Description N-CHANNEL POWER MOSFET
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10N70 datasheet page 1 preview

DESCRIPTION

The UTC
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FEATURES

* RDS(ON) ≤ 1.2Ω @ VGS=10V, ID=5.0A * Fast switching * 100% avalanche tested * Improved dv/dt capability
● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N70L-TF1-T 10N70G-TF1-T 10N70L-TF2-T 10N70G-TF2-T 10N70L-TF3-T 10N70G-TF3-T 10N70L-TQ2-T 10N70G-TQ2-T 10N70L-TQ2-R 10N70G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-220F TO-263 TO-263 Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tape Reel Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-572.G 10N70
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 9 QW-R502-572.G 10N70 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage Avalanche Current (Note 2) VGSS ±30 V IAR 10 A Drain Current Continuous Pulsed (Note 2) ID IDM 10 A 40 A Avalanche Energy Single Pulsed (Note 3) Repetitive (No...
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