Unisonic Technologies 10NM50
10NM50 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.| Part No. | 10NM50 |
|---|---|
| Datasheet | 10NM50 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 0.35Ω @ VGS=10V, ID=5.0A * By using Super Junction Structure * Fast Switching * With 100% Avalanche Tested● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10NM50L-TF1-T 10NM50G-TF1-T 10NM50L-TN3-R 10NM50G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-252 Pin Assignment 123 GDS GDS Packing Tube Tape Reel Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-229.a 10NM50
● MARKING Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R205-229.a 10NM50 Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage Drain Current Continuous Pulsed (Note 2) Avalanche Current (Note 2) VGSS ID IDM IAR ±30 10 40 5.3 V A A A Avalanche Energy Single Pulsed (Note 3) EAS 140 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 6.5 V/ns Power Dissipation TO-220F1 TO-252 PD 48 108 W W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1.
