Unisonic Technologies 11N50-CB
11N50-CB is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode.| Part No. | 11N50-CB |
|---|---|
| Datasheet | 11N50-CB Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC The UTC 11N50-CB is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc.●
FEATURES
* RDS(ON) < 0.55Ω @ VGS = 10 V, ID = 5.5 A * Fast Switching * With 100% Avalanche Tested● SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 11N50L-TF1-T 11N50G-TF1-T TO-220F1 11N50L-TF2-T 11N50G-TF2-T TO-220F2 11N50L-TF3-T 11N50G-TF3-T TO-220F Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tube
● MARKING Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R205-228 .a 11N50-CB Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 500 ±30 V V Drain Current Continuous Pulsed (Note 2) ID IDM 11 44 A A Avalanche Current (Note 2) Avalanche Energy...
