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11N80-C Datasheet N-channel MOSFET

Manufacturer: Unisonic Technologies

Overview: UNISONIC TECHNOLOGIES CO., LTD 11N80-C 11A, 800V NHANNEL POWER MOSFET.

General Description

The UTC 11N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

 FEATURES0 * RDS(ON) ≤ 0.9 Ω @ VGS=10V, ID=5.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL 2.Drain 1 1 1 Power MOSFET TO-3P TO-220F1 TO-220F2 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11N80L-TF1-T 11N80G-TF1-T 11N80L-TF2-T 11N80G-TF2-T 11N80L-T3P-T 11N80G-T3P-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-3P Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tube 11N80G-TF1-T (1)Packing Type (2)Package Type (3)Green Package (1) T: Tube (2) TF1: TO-220F1, TF2: TO-220F2, T3P: TO-3P (3) G: Halogen Free and Lead Free, L: Lead Free  MARKING Lot Code UTC 11N80 1 L: Lead Free G: Halogen Free Date Code www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 8 QW-R205-450.C 11N80-C Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID 11 A Pulsed (Note 2) IDM 22 A Avalanche Energy Single Pulsed (Note 3) EAS 451 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 1.2 V/ns Power Dissipation TO-220F1/ TO-220F2 TO-3P PD 40 W 297 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °С °С Notes: 1.

Key Features

  • S0.
  • RDS(ON) ≤ 0.9 Ω @ VGS=10V, ID=5.5A.
  • Low Reverse Transfer Capacitance.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL 2.Drain 1 1 1 Power MOSFET TO-3P TO-220F1 TO-220F2 1.Gate 3.Source.

11N80-C Distributor