Unisonic Technologies 11NM40
11NM40 is an Super Junction MOSFET Structure . It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 11NM40 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc.| Part No. | 11NM40 |
|---|---|
| Datasheet | 11NM40 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC 11NM40 is an Super Junction MOSFET Structure .●
FEATURES
* RDS(ON) < 0.38Ω @ VGS=10V, ID=5.7A * High switching speed * Low effective output capacitance (Typ.=95pF) * Low gate charge (Typ.=40nC)● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11NM40L-TF3-T 11NM40G-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F Pin Assignment 123 GDS Packing Tube
● MARKING Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A38.b 11NM40 Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage Drain Current Continuous TC=25°C TC=100°C Pulsed (Note 1) VGSS ID IDM ±30 11.6 7 33 V A A A Avalanche Current (Note 1) Single Pulsed Avalanche Energy (Note 2) IAR EAS 11 A 154 mJ Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) EAR dv/dt 12.5 mJ 4.5 V/ns Total Power Dissipation TC=25°C Derate ab...
