Unisonic Technologies 12N10
12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged avalanche characteristics and less critical alignment steps.| Part No. | 12N10 |
|---|---|
| Datasheet | 12N10 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(on) < 0.18Ω @ VGS=10V, ID=6A * High switching speed * Low gate charge● SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 12N10L-TA3-T 12N10G-TA3-T 12N10L-TM3-T 12N10G-TM3-T 12N10L-TN3-R 12N10G-TN3-R - 12N10G-S08-R Note: Pin Assignment: G: Gate D: Drain Package TO-220 TO-251 TO-252 SOP-8 S: Source Pin Assignment 12345678 Packing GDS - - - - - Tube GDS - - - - - Tube G D S - - - - - Tape Reel S S S G D D D D Tape Reel Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-737.E 12N10
● MARKING TO-220 / TO-251 / TO-252 Power MOSFET SOP-8 UNISONIC TECHNOLOGIES CO., LTD 2 of 6 QW-R502-737.E 12N10 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0) Gate-Source Voltage VDSS 100 V VGSS ±20 V Drain Current Continuous TC=25°C TC=100°C ID 12 A 8.5 A Pulsed (Note 2) TO-220 IDM 48 A 73 Power Dissipation TO-251/TO-252 SOP-8 PD 30 W 5 Avalanche Energy (Note 3) Junction Temperature EAS 100 mJ TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
