12N25V Datasheet PDF | Unisonic Technologies

Unisonic Technologies 12N25V

12N25V is a n N-c hannel mo de power MOSF ET using UTC’ s advanced technology to provide customers with planar stripe and DMOS te chnology. It also can withstand hig h e nergy pu lse i n the avala nche and commutation mode. The UTC 12N25V is universally applied in electronic lamp ballast based o n ha lf brid ge to pology an d h igh efficient s witched mo de power supply.

Part No.	12N25V
Datasheet	12N25V Download
Manufacturer	Unisonic Technologies
Description	12A 250V N-CHANNEL POWER MOSFET
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DESCRIPTION

Power MOSFET The U TC T his techno logy s pecializes in allowing a minimum on-state resistance and superior switching performance.

FEATURES

* ID=12A * VDS = 250V * RDS(ON)=0.34Ω @ VGS=10V * High switching speed * 100% avalanche tested SYMBOL ORDERING INFORMATION Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube Ordering Number Lead Free Halogen Free 12N25VL-TA3-T 12N25VG-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-917, A 12N25V Power MOSFET PARAMETER SYMBOL VDSS 250 VGSS ±20 ID 12 IDM EAS PD RATINGS UNIT V V A A mJ W/°C

ABSOLUTE MAXIMUM RATINGS

(TC=25°C, unless otherwise specified) Drain-Source Voltage Gate-Source Voltage Drain Current Single Pulsed Avalanche Energy Power Dissipation Derate above 25°C Continuous (TC=25°C) Pulsed (Note 2) 48 474 192 W 1.53 Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.