12N30 Datasheet PDF | Unisonic Technologies

Unisonic Technologies 12N30

12N30 is an N-ch annel mod e p ower MOSF ET using UTC’ s advanced technology to provide customers with planar stripe and DMOS te chnology. It also can withstand hig h e nergy pu lse i n the avala nche and commutation mode. The UT C 12N30 is univers ally ap plied in el ectronic lam p ball ast based o n ha lf brid ge to pology an d h igh efficient s witched mo de power supply.

Part No.	12N30
Datasheet	12N30 Download
Manufacturer	Unisonic Technologies
Description	12A 300V N-CHANNEL POWER MOSFET
Buy	Stock & Price

DESCRIPTION

The U TC T his techno logy s pecializes in allowing a minimum on-state resistance and superior switching performance.

FEATURES

* RDS(ON)=0.34Ω @ VGS=10V * High switching speed SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Package TO-252 1 G Pin Assignment 2 3 D S Packing Tape Reel Ordering Number Lead Free Halogen Free 12N30L-TN3-R 12N30G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-787.a 12N30 Preliminary Power MOSFET

ABSOLUTE MAXIMUM RATINGS

(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 300 V Gate-Source Voltage VGSS ±20 V ID 12 A Continuous (TC=25°C) Drain Current Pulsed (Note 2) IDM 48 A Single Pulsed Avalanche Energy EAS 474 mJ Power Dissipation PD 83 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.