Unisonic Technologies 12N60-C
12N60-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.| Part No. | 12N60-C |
|---|---|
| Datasheet | 12N60-C Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 0.7 Ω @ VGS = 10 V, ID = 6.0 A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 12N60L-TF1-T 12N60G-TF1-T TO-220F1 12N60L-TF3-T 12N60G-TF3-T TO-220F Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS Packing Tube Tube
● MARKING Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-B50.a 12N60-C Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage Continuous Drain Current VGSS ID ±30 12 V A Pulsed Drain Current (Note 2) Avalanche Energy Single Pulsed (Note 3) IDM EAS 48 A 109 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 1.9 ns Power Dissipation TO-220 TO-220F1 PD 156 W 51 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
