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12N65K-MT Datasheet PDF

Unisonic Technologies 12N65K-MT

The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply.
Part No. 12N65K-MT
Datasheet 12N65K-MT Download
Manufacturer
Unisonic Technologies
Description N-CHANNEL POWER MOSFET
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12N65K-MT datasheet page 1 preview

DESCRIPTION

To minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode, the advanced technology has been especially tailored.
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FEATURES

* RDS(ON) < 0.75 Ω @ VGS = 10 V, ID = 6 A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 12N65KL-TF1-T 12N65KG-TF1-T 12N65KL-TF2-T 12N65KG-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 Pin Assignment 123 GDS GDS Packing Tube Tube 12N65KL-TF1-T (1)Packing Type (2)Package Type (3)Green Package (1) T: Tube (2) TF1: TO-220F1, TF2: TO-220F2 (3) L: Lead Free, G: Halogen Free and Lead Free
● MARKING Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-B07.F 12N65K-MT Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS

(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Sou...
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