Unisonic Technologies 12N70-MH
12N70-MH is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.| Part No. | 12N70-MH |
|---|---|
| Datasheet | 12N70-MH Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 1.1 Ω @ VGS=10V, ID=6.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 12N70L-TF1-T 12N70G-TF1-T 12N70L-TF2-T 12N70G-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube
● MARKING Copyright © 2020 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-716.A 12N70-MH Power MOSFET
●
ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 700 V VGSS ±30 V Continuous Drain Current Pulsed Drain Current (Note 2) ID 12 A IDM 24 A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 303 mJ 2.8 V/ns Power Dissipation Junction Temperature PD 36 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
