Unisonic Technologies 12NN10
12NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness.| Part No. | 12NN10 |
|---|---|
| Datasheet | 12NN10 Download |
| Manufacturer |  Unisonic Technologies |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* Low Gate Charge (Typically 14.2nC) * RDS(ON) < 0.18Ω @ VGS=10V, ID=2.0A * Fast Switching Speed * Simple Drive Requirement● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 12NN10G-S08-R 12NN10G-S08-R SOP-8 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 4 5, 6 7, 8 S1 G1 S2 G2 D2 D1 Packing Tape Reel 12NN10G-S08-R (1)Packing Type (1) R: Tape Reel (2)Package Type (2) S08: SOP-8 (3)Green Package (3) G: Halogen Free and Lead Free, L: Lead Free
● MARKING Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-506.F 12NN10 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous(Note 3) Pulsed(Note 2) ID IDM 2.5 10 A A Power Dissipation PD 2 W Junction Temperature TJ -40 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
