13003BDG Datasheet PDF | Unisonic Technologies

Unisonic Technologies 13003BDG

13003BDG is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 13003BDG is suitable for electronic ballast power switch circuit and the compact electronic energy-saving light.

Part No.	13003BDG
Datasheet	13003BDG Download
Manufacturer	Unisonic Technologies
Description	NPN SILICON TRANSISTOR
Buy	Stock & Price

DESCRIPTION

The UTC

FEATURES

* High collector-base breakdown voltage * Low reverse leakage current * High reliability EQUIVALENT CIRCUIT C B E ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13003BDGL-TM3-T 13003BDGP-TM3-T 13003BDGL-T60-F-K 13003BDGP-T60-F-K 13003BDGL-T92-F-B 13003BDGP-T92-F-B 13003BDGL-T92-F-K 13003BDGP-T92-F-K Note: Pin Assignment: B: Base C: Collector E: Emitter Package TO-251 TO-126 TO-92 TO-92 Pin Assignment 123 BCE BCE BCE BCE Packing Tube Bulk Tape Box Bulk 13003BDGL-T60-F-B (1)Packing Type (2)Pin Assignment (1) T: Tube, B: Bluk, K: Bulk (2) refer to Pin Assignment (3)Package Type (4)Lead Free (3) TM3: TO-251, T60: TO-126, T92: TO-92 (4) L: Lead Free, P: Halogen Free Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R223-017.c 13003BDG MARKING PACKAGE TO-251 TO-126 TO-92 Preliminary NPN SILICON TRANSISTOR MARKING UNISONIC TECHNOLOGIES CO., LTD 2 of 4 QW-R223-017.c 13003BDG Preliminary NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS

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