13003DE Datasheet PDF | Unisonic Technologies

Unisonic Technologies 13003DE

13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 13003DE is suitable for electronic ballasts and the general power switch circuit, etc.

Part No.	13003DE
Datasheet	13003DE Download
Manufacturer	Unisonic Technologies
Description	NPN SILICON TRANSISTOR
Buy	Stock & Price

DESCRIPTION

The UTC

FEATURES

* High collector-base breakdown voltage * High reliability * Low reverse leakage current EQUIVALENT CIRCUIT C B E ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13003DEL-x-T60-F-K 13003DEG-x-T60-F-K 13003DEL-x-T92-A-B 13003DEG-x-T92-A-B 13003DEL-x-T92-A-K 13003DEG-x-T92-A-K Note: Pin Assignment: B: Base C: Collector E: Emitter Package TO-126 TO-92 TO-92 Pin Assignment 123 BCE ECB ECB 13003DEL-T60-F-B (1)Packing Type (1) B: Bluk, K: Bulk (2)Pin Assignment (3)Package Type (4)Lead Free (2) refer to Pin Assignment (3) T60: TO-126, T92: TO-92 (4) L: Lead Free, G: Halogen Free MARKING TO-126 TO-92 Packing Bulk Tape Box Bulk Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R223-013.c 13003DE Preliminary NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS

(TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO 600 V VCEO 400 V Emitter-Base Voltage Continuous Collector Current...