Unisonic Technologies 16NM65
16NM65 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.| Part No. | 16NM65 |
|---|---|
| Datasheet | 16NM65 Download |
| Manufacturer |  Unisonic Technologies |
| Description | 650V N-CHANNEL SUPER-JUNCTION MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 0.35 Ω @ VGS=10V, ID=8.0A * High Switching Speed● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 16NM65L-TF1-T 16NM65G-TF1-T 16NM65L-TF2-T 16NM65G-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube
● MARKING Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-D92.B 16NM65 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current Continuous ID Pulsed IDM 16 48 A A Single Pulsed Avalanche Energy EAS 480 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 1.6 V/ns Power Dissipation PD 31 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
