Unisonic Technologies 17N70-ML
17N70-ML is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.| Part No. | 17N70-ML |
|---|---|
| Datasheet | 17N70-ML Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 0.56 Ω @ VGS=10V, ID=8.5A * High Switching Speed● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 17N70L-TF1-T 17N70G-TF1-T 17N70L-TF2-T 17N70G-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube
● MARKING Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-D172.A 17N70-ML Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 700 V VGSS ±30 V Continuous Drain Current Continuous ID Pulsed IDM 17 34 A A Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 1058 mJ 2.2 V/ns Power Dissipation Junction Temperature PD 45 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
