Unisonic Technologies 17P12
The 17P12 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.| Part No. | 17P12 |
|---|---|
| Datasheet | 17P12 Download |
| Manufacturer |  Unisonic Technologies |
| Description | P-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* RDS(ON) < 0.22Ω @ VGS=-10V, ID=-8.25A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 17P12L-TA3-T 17P12G-TA3-T 17P12L-TN3-R 17P12G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-252 Pin Assignment 123 GDS GDS Packing Tube Tape Reel
● MARKING Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R208-057.a 17P12 Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -120 V Gate-Source Voltage Continuous Drain Current VGSS ID ±30 -17 V A Pulsed Drain Current (Note 2) Avalanche Current (Note 2) IDM -52 A IAR -14 A Single Pulsed Avalanche Energy (Note 3) Peak Diode Recovery dv/dt EAS dv/dt 340 mJ 5 V/ns Power Dissipation TO-220 TO-252 PD 100 W 70 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °С °С Notes: 1.
