DESCRIPTION
Power MOSFET The UTC FEATURES
* RDS(ON) ≤ 408mΩ @VGS = 10 V * Ultra Low Gate Charge: 50nC (TYP.) * Low Reverse Transfer ( CRSS = typical 23pF ) * Fast Switching Speed * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen-Free 18N40L-T47-T 18N40G-T47-T Package TO-247 1 G Pin Assignment 2 3 D S Packing Tube 1 of 3 QW-R502-389.A Copyright © 2010 Unisonic Technologies Co., Ltd 18N40 ABSOLUTE MAXIMUM RATINGS
(TC =25°С, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Power MOSFET SYMBOL RATINGS UNIT VDSS 400 V VGSS ±30 V Continuous ID 18 A Drain Current Pulsed IDM 45 A Avalanche Current IAR 18 A Single Pulsed EAS 1000 mJ Avalanche Energy 30 mJ Repetitive EAR Peak Diode Recovery dv/dt dv/dt 10 V/ns Power Dissipation PD 360 W Junction Temperature TJ 150 °С Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.