Unisonic Technologies 18N65
The UTC 18N65 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.| Part No. | 18N65 |
|---|---|
| Datasheet | 18N65 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness● SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 18N65L-T3P-T 18N65G-T3P-T 18N65L-T3N-T 18N65G-T3N-T 18N65L-T47-T 18N65G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-3P TO-3PN TO-247 Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tube
● MARKING Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-771.E 18N65 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage Continuous Drain Current VGSS ±30 V ID 18 A Pulsed Drain Current Avalanche Energy Single Pulsed IDM EAS 45 938 (Note 2) A mJ Peak Diode Recovery dv/dt dv/dt 10 V/ns Power Dissipation TO-3P/TO-3PN TO-247 PD 390 W 357 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
