1N80 Datasheet PDF | Unisonic Technologies

Unisonic Technologies 1N80

1N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.

Part No.	1N80
Datasheet	1N80 Download
Manufacturer	Unisonic Technologies
Description	N-CHANNEL POWER MOSFET
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DESCRIPTION

The UTC The UTC 1N80 is universally applied in high efficiency switch mode power supply.

FEATURES

* RDS(on)=13.5Ω @VGS =10V * High switching speed * Improved dv/dt capability * 100% avalanche tested SYMBOL Power MOSFET ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 1N80L-TA3-T 1N80G-TA3-T 1N80L-TF3-T 1N80G-TF3-T 1N80L-TF1-T 1N80G-TF1-T 1N80L-TM3-T 1N80G-TM3-T 1N80L-TN3-T 1N80G-TN3-T 1N80L-TN3-R 1N80G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-251 TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-491.E 1N80 Power MOSFET

ABSOLUTE MAXIMUM RATINGS

(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 1.0 A Drain Current Continuous ID Pulsed (Note 1) IDM 1.0 A 4.0 A Single Pulsed (...