1NM60-Q Description
The UTC 1NM60-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.
1NM60-Q Key Features
- RDS(ON) < 4.6Ω @ VGS = 10V, ID =0.5A
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- SYMBOL
- 251 TO-252 1 SOT-223
- ORDERING INFORMATION
- 1NM60G-AA3-R
- MARKING