Datasheet4U Logo Datasheet4U.com

1NM60-Q - N-CHANNEL MOSFET

Description

The UTC 1NM60-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.

Features

  • S.
  • RDS(ON) < 4.6Ω @ VGS = 10V, ID =0.5A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET TO - 251 TO-252 1 SOT-223.

📥 Download Datasheet

Datasheet preview – 1NM60-Q

Datasheet Details

Part number 1NM60-Q
Manufacturer UTC
File Size 215.98 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet 1NM60-Q Datasheet
Additional preview pages of the 1NM60-Q datasheet.

📁 Similar Datasheet

Other Datasheets by UTC

    Full PDF Text Transcription

    Click to expand full text
    UNISONIC TECHNOLOGIES CO., LTD 1NM60-Q 1.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET 1  DESCRIPTION The UTC 1NM60-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications. 1  FEATURES * RDS(ON) < 4.6Ω @ VGS = 10V, ID =0.
    Published: |