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1P50 Datasheet PDF

Unisonic Technologies 1P50

1P50 is a P-channel MOS Field Effect Transistor. it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC 1P50 is suitable for high voltage switching applications.
Part No. 1P50
Datasheet 1P50 Download
Manufacturer
Unisonic Technologies
Description P-CHANNEL POWER MOSFET
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1P50 datasheet page 1 preview

DESCRIPTION

The UTC 1P50 is a P-channel MOS Field Effect Transistor.
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FEATURES

* RDS(ON) ≤ 14 Ω @ VGS=-10V, ID=-0.5A * High switching speed * Low input capacitance
● SYMBOL
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 1P50L-AA3-R 1P50G-AA3-R 1P50L-TN3-R 1P50G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tape Reel
● MARKING SOT-223 Copyright © 2024 Unisonic Technologies Co., Ltd TO-252 1 of 8 QW-R210-065.B 1P50 POWER MOSFET
● ABSOLUTE MAXIMUM RATING (TA=25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -500 V Gate-Source Voltage VGSS ±30 V Drain Current DC ID Pulsed (Note 2) IDM -1 A -3 A Single Avalanche Energy (Note 3) EAS 25 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.1 V/ns Power Dissipation (TC=25°C) SOT-223 TO-252 PD 10 W 28 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
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