Unisonic Technologies 20NM70
20NM70 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.| Part No. | 20NM70 |
|---|---|
| Datasheet | 20NM70 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 0.26 Ω @ VGS=10V, ID=10A * By using Super Junction Structure * Fast Switching * With 100% Avalanche Tested● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 20NM70L-TF1-T 20NM70G-TF1-T 20NM70L-TF2-T 20NM70G-TF2-T 20NM70L-T47-T 20NM70G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-247 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube
● MARKING Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-806.b 20NM70 Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Pulsed Drain Current Pulsed (Note 2) Avalanche energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) VDSS VGSS ID IDM EAS dv/dt 700 V ±30 V 20 A 40 A 20.2 mJ 6.7 V/nS Power Dissipation TO-220F1/TO-220F2 TO-247 PD 34 W 132 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1.
