Unisonic Technologies 21NM50
21NM50 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.| Part No. | 21NM50 |
|---|---|
| Datasheet | 21NM50 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC 1 TO-220 1 11 TO-220F1 TO-220F TO-220F2●
FEATURES
* RDS(ON) < 0.22Ω @ VGS=10V, ID=10.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness 1 TO-247● SYMBOL 2.Drain 1.Gate 3.Source
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 21NM50L-TA3-T 21NM50G-TA3-T 21NM50L-TF3-T 21NM50G-TF3-T 21NM50L-TF1-T 21NM50G-TF1-T 21NM50L-TF2-T 21NM50G-TF2-T 21NM50L-T47-T 21NM50G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-220F2 TO-247 Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-137.c 21NM50
● MARKING Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R205-137.c 21NM50 Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage Drain Current Avalanche Current (N...
