Unisonic Technologies 24N65-CB
24N65-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 24N65-CB |
|---|---|
| Datasheet | 24N65-CB Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 0.37Ω @ VGS=10V, ID=12A * High Switching Speed * 100% Avalanche Tested● SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 24N65L-T47-T 24N65G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-247 Pin Assignment 123 GDS Packing Tube
● MARKING Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-B52.B 24N65-CB Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous Pulsed (Note 2) ID IDM 24 96 A A Avalanche Energy Single Pulsed (Note 3) EAS 140 mJ Peak Diode Recovery dv/dt dv/dt 0.57 V/ns Power Dissipation PD 367 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
