Unisonic Technologies 25N20
25N20 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is generally suitable for all commercial-industrial applications and DC/DC converters requiring low voltage.| Part No. | 25N20 |
|---|---|
| Datasheet | 25N20 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 160 mΩ @ VGS =10V, ID =16A * Single Drive Requirement * Low Gate Charge * RoHS Compliant● SYMBOL Power MOSFET
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 25N20L-TF3-T 25N20G-TF3-T 25N20L-TF1-T 25N20G-TF1-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220F TO-220F1 Pin Assignment 123 GDS GDS Packing Tube Tube
● MARKING Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-A84.D 25N20 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT Drain Source Voltage VDSS 200 V Gate Source Voltage Continuous Drain Current TC =25°C (VGS=10V) TC = 100°C Pulsed Drain Current (Note 2) VGSS ID ID IDM ±20 25 15.86 80 V A A A Total Power Dissipation (TC =25°C) Operating Junction Temperature PD 50 W TJ -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
