26N50 Datasheet PDF | Unisonic Technologies

Unisonic Technologies 26N50

26N50 is an N-ch annel mod e p ower MOSF ET using UTC’s advanced technology to provide customers with planar stripe and DMOS technol ogy. It also can withstand high energy pulse in the avalanche and commutation mode. The U TC 26N50 is g enerally a pplied in h igh effici ency switch mode po wer suppl ies, active po wer factor correction a nd electroni c lamp ballasts based on half bridge topology.

Part No.	26N50
Datasheet	26N50 Download
Manufacturer	Unisonic Technologies
Description	26A 500V N-CHANNEL POWER MOSFET
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DESCRIPTION

The U TC T his techn ology a llows a minim um on-state resistance and superior switching performance.

FEATURES

* RDS(ON)=0.24Ω @ VGS=10V * High Switching Speed * 100% Avalanche Tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Package TO-3P 1 G Pin Assignment 2 3 D S Packing Tube Ordering Number Lead Free Halogen Free 26N50L-T3P-T 26N50G-T3P-T Note: Pin Assignment: G: Gate D: Drain S: Source Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-789.a 26N50 Preliminary Power MOSFET

ABSOLUTE MAXIMUM RATINGS

(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V e 2) A Continuous (TC=25°C) I D 24(Not Drain Current Pulsed (Note 3) IDM 96 (Note 2) A Avalanche Current (Note 3) IAR 26 A 100 mJ Single Pulsed (Note 4) EAS 1 Avalanche Energy Repetitive (Note 5) EAR 29 mJ Peak Diode Recovery dv/dt (Note 5) dv/dt 15 V/ns Power Dissipation 290 W PD Derate above 25°C 2.33 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~ +150 °C Note: 1.