28N50-CB Description
The UTC 28N50-CB is a N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse under the avalanche and mutation mode conditions.
28N50-CB Key Features
- RDS(ON) ≤ 0.22Ω @ VGS=10V, ID=14A
- Fast switching capability
- Avalanche energy tested
- Improved dv/dt capability, high ruggedness
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