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28N50-CB - N-CHANNEL MOSFET

Datasheet Summary

Description

The UTC 28N50-CB is a N-Channel enhancement mode power MOSFET.

The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed.

It can also withstand high energy pulse under the avalanche and commutation mode conditions.

Features

  • S.
  • RDS(ON) ≤ 0.22Ω @ VGS=10V, ID=14A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

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Datasheet preview – 28N50-CB

Datasheet Details

Part number 28N50-CB
Manufacturer UTC
File Size 428.61 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet 28N50-CB Datasheet
Additional preview pages of the 28N50-CB datasheet.

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    UNISONIC TECHNOLOGIES CO., LTD 28N50-CB 28A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 28N50-CB is a N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse under the avalanche and commutation mode conditions. The UTC 28N50-CB is ideally suitable for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge topology.  FEATURES * RDS(ON) ≤ 0.
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