Datasheet Details
| Part number | 2N120-E4 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 660.00 KB |
| Description | 1200V N-CHANNEL POWER MOSFET |
| Datasheet | 2N120-E4-UTC.pdf |
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Overview: UNISONIC TECHNOLOGIES CO., LTD 2N120-E4 2.0A, 1200V N-CHANNEL POWER.
| Part number | 2N120-E4 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 660.00 KB |
| Description | 1200V N-CHANNEL POWER MOSFET |
| Datasheet | 2N120-E4-UTC.pdf |
|
|
|
The UTC 2N120-E4 provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
FEATURES0 * RDS(ON) ≤ 10 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N120L-TF1-T 2N120G-TF1-T 2N120L-TF2-T 2N120G-TF2-T 2N120L-TN3-R 2N120G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel MARKING .unisonic..tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 8 QW-R205-888.C 2N120-E4 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 1200 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous Pulsed (Note 2) ID IDM 2 A 4 A Avalanche Energy Single Pulsed (Note 3) EAS 57 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.7 V/ns Power Dissipation TO-220F1/TO-220F2 TO-252 PD 15 W 50 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
| Part Number | Description |
|---|---|
| 2N120 | 1200V N-CHANNEL POWER MOSFET |