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2N120-E4 - 1200V N-CHANNEL POWER MOSFET

General Description

The UTC 2N120-E4 provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S0.
  • RDS(ON) ≤ 10 Ω @ VGS=10V, ID=1.0A.
  • Low Reverse Transfer Capacitance.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET.

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Other Datasheets by Unisonic Technologies

Part Number Description
2N120 1200V N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD 2N120-E4 2.0A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N120-E4 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 10 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N120L-TF1-T 2N120G-TF1-T 2N120L-TF2-T 2N120G-TF2-T 2N120L-TN3-R 2N120G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel  MARKING www.