Unisonic Technologies 2N40-V
2N40-V is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.| Part No. | 2N40-V |
|---|---|
| Datasheet | 2N40-V Download |
| Manufacturer |  Unisonic Technologies |
| Description | 400V N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 8.0 Ω @ VGS=10V, ID=1.25A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 2N40L-TM3-T 2N40G-TM3-T 2N40L-TN3-R 2N40G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel
● MARKING Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 8 QW-R205-540.B 2N40-V Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID Pulsed (Note 2) IDM 2 A 4 A Avalanche Energy Single Pulsed (Note 3) EAS 7.2 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 1.1 V/ns Power Dissipation PD 22 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
