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2N50-SE - N-CHANNEL POWER MOSFET

General Description

The UTC 2N50-SE is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) ≤ 8.0 Ω @ VGS=10V, ID=1.0A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET SOP-8 TO-92.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 2N50-SE Preliminary 2.0A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N50-SE is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits. 1  FEATURES * RDS(ON) ≤ 8.0 Ω @ VGS=10V, ID=1.