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2N50-SE Datasheet PDF

Unisonic Technologies 2N50-SE

2N50-SE is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.
Part No. 2N50-SE
Datasheet 2N50-SE Download
Manufacturer
Unisonic Technologies
Description N-CHANNEL POWER MOSFET
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2N50-SE datasheet page 1 preview

DESCRIPTION

The UTC 1
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FEATURES

* RDS(ON) ≤ 8.0 Ω @ VGS=10V, ID=1.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
● SYMBOL Power MOSFET SOP-8 TO-92
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2N50L-S08-R 2N50G-S08-R SOP-8 2N50L-T92-B 2N50G-T92-B TO-92 2N50L-T92-K 2N50G-T92-K TO-92 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12345678 Packing S S S G D D D D Tape Reel G D S - - - - - Tape Box GDS - - - - - Bulk Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-790.b 2N50-SE
● MARKING SOP-8 Preliminary Power MOSFET TO-92 UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R205-790.b 2N50-SE Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS

(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) VDSS VGSS ID IDM EAS...
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