Datasheet4U Logo Datasheet4U.com

2N60-TC - N-CHANNEL MOSFET

General Description

designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) ≤ 4.2 Ω @ VGS=10V, ID=1.0A.
  • High Switching Speed 1 SOT-223 1 TO-220F 11 TO-220F1 TO-220F2 1 TO-251 1 TO-252.
  • SYMBOL 2.Drain 1.Gate 3.Source.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N60-E N-CHANNEL POWER MOSFET Unisonic Technologies
2N60 2A 600V N-channel Enhancement Mode Power MOSFET ROUM
2N60 N-Channel MOSFET HAOHAI
2N60 TO-251 N-Channel MOSFET INCHANGE
2N60 N-Channel Power MOSFET nELL

Other Datasheets by Unisonic Technologies

Part Number Description
2N60-C N-CHANNEL MOSFET
2N60-CBS N-CHANNEL POWER MOSFET
2N60-F N-CHANNEL MOSFET
2N60 N-CHANNEL MOSFET
2N6027 PROGRAMMABLE UNIJUNCTION TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 2N60-TC Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-TC is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.  FEATURES * RDS(ON) ≤ 4.2 Ω @ VGS=10V, ID=1.0A * High Switching Speed 1 SOT-223 1 TO-220F 11 TO-220F1 TO-220F2 1 TO-251 1 TO-252  SYMBOL 2.Drain 1.Gate 3.