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2N60L Datasheet

Manufacturer: Unisonic Technologies
2N60L datasheet preview

Datasheet Details

Part number 2N60L
Datasheet 2N60L-UTC.pdf
File Size 238.49 KB
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
2N60L page 2 2N60L page 3

2N60L Overview

1 1 Power MOSFET TO-220 The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

2N60L Key Features

  • VDS = 600V, ID = 2A
  • RDS(ON) = 5Ω@VGS = 10V
  • Ultra Low gate charge (typical 9.0nC)
  • Low reverse transfer capacitance (CRSS = typical 5.0 pF)
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability, high ruggedness
  • SYMBOL
  • ORDERING INFORMATION

2N60L from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
ART CHIP Logo 2N60L N-CHANNEL MOSFET ART CHIP
ROUM 2N60 2A 600V N-channel Enhancement Mode Power MOSFET ROUM
HAOHAI Logo 2N60 N-Channel MOSFET HAOHAI
INCHANGE Logo 2N60 TO-251 N-Channel MOSFET INCHANGE
nELL Logo 2N60 N-Channel Power MOSFET nELL
Unisonic Technologies logo - Manufacturer

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