Unisonic Technologies 2N60ZL
2N60ZL is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 2N60ZL |
|---|---|
| Datasheet | 2N60ZL Download |
| Manufacturer |  Unisonic Technologies |
| Description | 600V N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) = 5Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness● SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N60ZLL-TF1-T 2N60ZLG-TF1-T 2N60ZLL-TM3-T 2N60ZLG-TM3-T 2N60ZLL-TN3-R 2N60ZLG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-251 TO-252 Pin Assignment 1 2 3 GDS GDS GDS Packing Tube Tube Tape Reel Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-830.B 2N60ZL Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 600 V VGSS ±20 V Avalanche Current (Note 2) Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4...
