Datasheet4U Logo Datasheet4U.com

2N70-CB - N-CHANNEL POWER MOSFET

General Description

The UTC 2N70-CB is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) < 6.0Ω @ VGS = 10V , ID = 1.0 A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N70-M N-CHANNEL POWER MOSFET Unisonic Technologies
2N700 PNP Transistor Motorola
2N7000 N-Channel DMOS FET Microchip
2N7000 TMOS FET Transistor Motorola Inc
2N7000 N-channel MOSFET NXP

Other Datasheets by Unisonic Technologies

Part Number Description
2N70-CA N-CHANNEL MOSFET
2N70-HC N-CHANNEL POWER MOSFET
2N70 N-CHANNEL POWER MOSFET
2N7000 N-Channel MOSFET
2N7002K N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 2N70-CB Preliminary 2A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N70-CB is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 6.0Ω @ VGS = 10V , ID = 1.