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2N70-CB Key Features
- RDS(ON) < 6.0Ω @ VGS = 10V , ID = 1.0 A
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- SYMBOL
- ORDERING INFORMATION
- MARKING
Other 2N70-CB Datasheets
| Manufacturer |
Part Number |
Description |
Unisonic Technologies |
2N70-M
|
N-CHANNEL POWER MOSFET |
Motorola Semiconductor |
2N700
|
PNP Transistor |
Microchip Technology |
2N7000
|
N-Channel DMOS FET |
Motorola Semiconductor |
2N7000
|
TMOS FET Transistor |
NXP Semiconductors |
2N7000
|
N-channel MOSFET |
