Unisonic Technologies 2N7002K
The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications.| Part No. | 2N7002K |
|---|---|
| Datasheet | 2N7002K Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Protected * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness● SYMBOL 3.Drain Power MOSFET 2.Gate 1.Source
● ORDERING INFORMATION Ordering Number Package 2N7002KG-AE2-R SOT-23-3 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 SGD Packing Tape Reel
● MARKING Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-541.D 2N7002K Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TA = 25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 60 V ±20 V Drain Current Continuous Pulse(Note 2) ID 300 800 mA Power Dissipation Derating above TA=25°C PD 350 mW 2.8 mW/°C Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
